Single Light Emitting Diode (LED) Structure

ABSTRACT

A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design. The single (LED) structure can also include a substrate for supporting the array, and the substrate can include one or more light shielding holes located between each emitting zone.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority from U.S. Provisional No. 62/551,859,filed Aug. 30, 2017, which is incorporated herein by reference.

BACKGROUND

This disclosure relates to single light emitting diode structuresconfigured to emit more than one color. These types of light emittingdiode (LED) structures can include multiple controllable emitting areas,which are controlled to have a desired amount of emitting light exitingfrom each emitting areas. By selective incorporation of color convertermembers, the emitting areas can be configured to emit different colorsthus producing a desired color spectra.

Indoor and outdoor LED displays are also being constructed usingfine-pitch LED packaging technology. For example, surface-mounted-device(SMD) LEDs and chip-scale-package (CSP) LEDs have been used asfine-pitch LED packages for making LED displays. LED displays are alsomoving towards more pixel volumes and pixel densities. The pitchrequirements are also advancing from 1010 on average to less than 0606.LED packages with smaller pitches are expected to see surging growth inthe near future. In these LED packages, a pure and clean emission pixelfor a display is a fundamental requirement for displaying a highdefinition image.

The prior art discloses multiple LEDs having various colors packagedtogether to produce a desired spectra of light. This disclosure isdirected to a single light emitting diode LED structure having multiplecontrollable emitting zones that can be converted to a different colorusing color converters to produce a desired light spectra. In addition,the single light emitting diode LED structure can be operated withreduced light crosstalk making a packaging process for the LED structuresimple and low cost.

SUMMARY

A single light emitting diode (LED) structure includes an array ofspaced discrete light emitting zones, each of which comprises anepitaxial structure configured to emit an emitting light havingparticular wavelength over an effective emission area. The effectiveemission area for each emitting zone can be geometrically defined andelectrically configured to provide a desired light intensity and colorfor the emitting light. In addition, geometry of the emitting zones andeffective emission areas can be defined during fabrication to reduce alight crosstalk effect. The light crosstalk effect can be furtherreduced by fabricating a shielding hole in the substrate, which islocated between each emitting zone.

In an illustrative embodiment, a single light emitting diode (LED)structure includes a substrate such as a plurality of controllableemitting zones on the substrate including a Zone 1, a Zone 2, a Zone 3and Zone n. The single light emitting diode (LED) structure can alsoinclude one or more wavelength conversion members in selected emissionzones for converting the emitting light to a different color to producea desired color spectrum. The single light emitting diode (LED)structure can be configured to produce red, blue, green, white, warmwhite on the same chip thus a single LED structure can be configured toemit multiple colors at different zones for a desired spectra or design.In addition, an effective emission area for each emitting zone can beconfigured to control the light intensity of an emitting color for eachemitting zone. To prevent the light cross talk effect between theemitting zones, each emission area can be surrounded by a lightshielding wall in the substrate located between each emitting zone. Inone embodiment of the single LED structure, the selected wavelengthconversion member can be contained in a wall or dam above the area ofthe particular emission zone. In an alternate embodiment of the singlelight emitting diode (LED) structure at least a portion of the substratehas been removed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an enlarged schematic cross section drawing with parts removedof a single light emitting diode (LED) structure;

FIG. 2 is an enlarged schematic cross section drawing with parts removedof a second single light emitting diode (LED) structure;

FIG. 3 is an enlarged schematic cross section drawing with parts removedof a third single light emitting diode (LED) structure;

FIG. 4 is an enlarged schematic cross section drawing with parts removedof a fourth single light emitting diode (LED) structure;

FIG. 5 is an enlarged schematic cross section drawing with parts removedof a fifth single light emitting diode (LED) structure;

FIG. 6 is an enlarged schematic cross section drawing with parts removedof a sixth single light emitting diode (LED) structure;

FIG. 7 is an enlarged schematic cross section drawing with parts removedof a seventh single light emitting diode (LED) structure;

FIG. 8 is an enlarged schematic cross section drawing with parts removedof an eight single light emitting diode (LED) structure;

FIG. 9A is top view of the seventh single light emitting diode (LED)structure shown in FIG. 7;

FIG. 9B is bottom view of the seventh single light emitting diode (LED)structure shown in FIG. 7;

FIG. 10A is top view of a single light emitting diode (LED) structure;

FIG. 10B is bottom view of a single light emitting diode (LED)structure;

FIG. 11 is an enlarged schematic cross section drawing with partsremoved of a ninth single light emitting diode (LED) structure;

FIG. 12 is an enlarged schematic cross section drawing with partsremoved of a tenth single light emitting diode (LED) structure;

FIG. 13 is an enlarged schematic cross section drawing with partsremoved of an eleventh single light emitting diode (LED) structure;

FIG. 14 is an enlarged schematic cross section drawing with partsremoved of a twelfth single light emitting diode (LED) structure;

FIG. 15 is an enlarged schematic cross section drawing with partsremoved of a thirteenth single light emitting diode (LED) structure;

FIG. 16 is an enlarged schematic cross section drawing with partsremoved of a fourteenth single light emitting diode (LED) structure;

FIG. 17 is an enlarged schematic cross section drawing with partsremoved of a fifteenth single light emitting diode (LED) structure;

FIG. 18 is an enlarged schematic cross section drawing with partsremoved of a sixteenth single light emitting diode (LED) structure; and

FIG. 19 is an enlarged schematic cross section drawing with partsremoved of a seventeenth single light emitting diode (LED) structure.

DETAILED DESCRIPTION

It is to be understood that when an element is stated as being “on”another element, it can be directly on the other element or interveningelements can also be present. However, the term “directly” means thereare no intervening elements. In addition, although the terms “first”,“second” and “third” are used to describe various elements, theseelements should not be limited by the term. Also, unless otherwisedefined, all terms are intended to have the same meaning as commonlyunderstood by one of ordinary skill in the art.

Referring to FIG. 1, a single light emitting diode (LED) structure 10 isillustrated. As used herein the term “single” refers to a chip. Thelight emitting diode (LED) structure 10 includes a substrate 12, ann-type layer 14, an active layer 16, a p-type layer 18, a reflectivemetal layer 22, an n-type contact metal layer 24, a P-metal electrodelayer 26, an isolation area 28 containing an isolation layer 20, and anN metal electrode layer 32. (Also note that the formation of the N metalelectrode layer 32 is not limited to the one shown in FIG. 1.Alternately it can be constructed as multiple N metal electrode layerslocated on n-type contact metal layers).

The single light emitting diode (LED) structure 10 is configured as adirect bandgap compound semiconductor light emitting diode (LED) formedusing semiconductor fabrication processes. For example, a LED epitaxialstructure 34 can be grown on the substrate 12 using semiconductorprocesses that include the initial growth of an epitaxy layer (e.g., then-type layer 14, such as a Si doped GaN layer), the active layer 16(e.g. multiple quantum wells), and the p-type layer 18 (e.g. Mg dopedGaN layer). In addition, the epitaxial structure 34 (FIG. 1) can beformed of a direct bandgap compound semiconductor light emitting diodematerial grown on a substrate. The emitting wavelength of semiconductorlight can be determined by the energy bandgap of direct bandgapsemiconductor compound. Different direct energy bandgap of thesemiconductor light emitting material can be selected from III-Vcompound semiconductors such as In_(x)Ga_(1-x)N, GaN, Al_(x)Ga_(1-x)N,In_(x)Ga_(1-x)As, InGaP, GaAs, GaAsP, InP,(Al_(x)Ga_(1-x))_(y)In_(1-y)P, GaP. The substrate 12 (FIG. 1) cancomprise a transparent material, such as a sapphire substrate, a bulkGaN substrate, and an MN bulk substrate.

Still referring to FIG. 1, the single light emitting diode (LED)structure 10 includes multiple emission zones (Zone 1, Zone 2, Zone 3),which are closely spaced, discreet, controllable, light emission zonesconfigured to emit a particular wavelength range of light. For example,Zone 1 can be configured as a green emission zone and can be locatedproximate to a left side of the single light emitting diode (LED)structure 10. Zone 2 can be configured as a blue emission zone and canbe located in a middle portion of the single light emitting diode (LED)structure 10. Zone 3 can be configured as a red emission zone and can belocated proximate to an opposing right side of the single light emittingdiode (LED) structure 10. It is to be understood that these locationsfor the various emission zones (Zone 1, Zone 2, Zone 3) in FIG. 1 aremerely exemplary, and the single light emitting diode (LED) structure 10can be configured to have multiple emission zones on the same substrate.There is no limit to the number of zones and as many as needed for thedesired spectra can be employed.

Still referring to FIG. 1, each emission zone can have a selected sizedepending on the application. Each emission zone can have a same area,or alternately a different area based on different light intensityrequirements. The size of each area can be different so that one canoptimize the optical outputs of each zone to the desired optical outputfor a desired input current. A non-active region 36 can be formedbetween the zones, to define a specific area for each zone in the singlelight emitting diode (LED) structure 10. In addition, a portion of then-type layer 14 can be exposed in each non-active region 36. Further, ann-type contact metal layer 24 can be exposed on a portion of the n-typelayer 14 to provide low resistance electrical connections. Stillfurther, the n-type contact metal layer 24 can be connected and formedas a finger shape or a mesh shape, on a portion of the exposed n-typelayer 14 in the single light emitting diode (LED) structure 10 toprovide improved current spreading for the individual sub-pixel lightemitting units formed by each zone. In one embodiment, there could bemultiple n-type contact metal layers 24 so that the current can evenlyflow to various zones.

Still referring to FIG. 1, in each zone, a portion of the active layer16 and a portion of the n-type layer 14 can be etched to expose then-type layer 14. As also shown on the left of FIG. 1, the isolation area28 can also contain an isolation material 20. The etched edge profile ofthe isolation area 28 can comprise a straight profile, an undercutprofile (inverted trapezoidal) or a positive trapezoid profile. Inaddition, the etched profile can comprise an oblique structureconfigured to confine the light in each zone (Zone 1, Zone 2, Zone 3).The defined p-type layer 18, active layer 16, and n-type layer 14 inZone 1 functions as a discrete light-emitting unit. Further, theisolation layer 20 can be formed on a portion of the p-type layer 18, onthe edge of the etched sidewall, and on a portion of the etched exposedn-type layer 14. In addition, the reflective layer 22 can be formed on aportion of the p-type layer 18 to provide good electrical propertieswhile at the same time functioning as a reflector configured to reflectthe light emitted from the active layer 16 to enhance the light outputs.

As also shown on the left of FIG. 1, a distance X1 can be measuredbetween a left-hand side reflective metal layer 38 and a left-hand sideeffective emission edge 40 for Zone 1. A distance X2 can measuredbetween a right-hand side reflective metal layer 42 and a right-handside effective emission edge 44 for Zone 1 and the left side of Zone 2.The distance X2 can be larger than that of X1. Also note that theeffective emission area 1 can also be defined by an effective contactarea 46 of the reflective metal layer 22 on the p-type layer 18. Thepurpose of the unbalanced position of the reflective metal layer 22 onthe p-type layer 18 is to provide a selected space (d1) for Zone 1relative to Zone 2. The spacing (d1) can be selected to provide no lightemission over a portion of Zone 1 thus reducing the scattering of lightfrom Zone 1 escaping to Zone 2. For the same purpose, Zone 2 emissionlight has enough space (d1) such that no light emitting from Zone 2scatters into Zone 1. Also note that the effective emission area 1 is inpart defined by the effective contact area 46 of the reflective metallayer 22 on the p-type layer 18. In another embodiment, the effectiveemission area 1 can be defined by the location of an isolation layer(not shown). In this case, a portion of the isolation layer (not shown)can be designed on the p-type layer 18 to expose a portion of p-typelayer 18 for the reflective metal layer 22 deposition. Also note thatthe reflective metal layer 22 in this embodiment can be formed on theexposed p-type layer and on the isolation layer (not shown). Theeffective emission area 1 can also be restricted by an isolation layer(not shown) on the p-type layer 18. In this case, the reflective metallayer 22 can be deposited on a portion of the p-type layer 18 and anisolation layer (not shown). The current would be blocked by theisolation layer (not shown) on the p-type layer 18. Zone 2 can beconfigured to emit a blue color. For a white balance-displaying image,the blue emission light intensity can be selected as a small ratio.Thus, each zone functions as a discreet LED unit designed for thesmallest emission area relative to an area of the reflective metal layer22. Similarly, effective emission area 2 can be designed by theeffective size of the reflective metal layer 22 on the p-type layer 18.Effective emission area 2 can also be designed by an open region of anisolation layer (not shown) exposed on the p-type layer 18.

For Zone 3 also note that the distance between a right-hand sidereflective metal layer 48 (right-hand with respect to Zone 2) and aright-hand side effective emission edge 50 (right-hand with respect toZone 2) is X3, and the distance between a right-hand side reflectivemetal layer 52 (right-hand with respect to Zone 3) and a right-hand sideeffective emission edge 54 (right-hand with respect to Zone 3) is x4.The distance of x3 is larger than that of the x4. Also note that theeffective emission area 3 is defined by an effective contact area 56 ofthe reflective metal layer 22 on the p-type layer 18. The purpose of theunbalance position of the reflective metal layer 22 on the p-type layer18 is to provide enough space (spacing d2) far away from Zone 2. Withthis space (spacing d2) there is no light emission over a portion ofZone 3, which reduces the scattering of light from Zone 3 escaping toZone 2. Similarly, Zone 2 emission light does not scatter into the Zone3. Rather than being defined by the effective contact area of thereflective metal layer 22 on the p-type layer 18, the effective emissionarea can alternately be defined by an isolation layer (not shown). Aportion of an isolation layer (not shown) can be designed on the p-typelayer 18 to expose a portion of p-type layer 18 for the reflective metallayer deposition. Also note that the reflective metal layer 22 can beformed on the exposed p-type layer and the isolation layer (not shown).An effective emission area 3 can also be restricted by a designedisolation layer (not shown) on the p-type layer 18. In this case, thereflective metal layer 22 can be deposited on a portion of the p-typelayer 18 and the isolation layer (not shown), thus blocking current.

The reflective metal layer 22 can comprise a metal selected from thegroup consisting of Ni, Ag, Au, Pt, TiW, TaN, ITO, Ti, Al, Sb, andalloys thereof. The isolation layer 20, as well as the isolation layers,which are not shown, can comprise a dielectric material selected fromthe group consisting of SiO2, SiNx, Al2O3, AlN, TiO2, Ta2O5, MgO orcombinations thereof in multiple layers. In addition, the isolationlayer 20 can comprise a distributed Bragg reflective (DBR) layer toprovide a sidewall reflective DBR layer to reflect the light back to thefunctional LED region and prevent light escaping to the adjacent zones.The isolation layer 20 can also comprise a transparent organic orinorganic material or a non-transparent organic or inorganic materialsuch as epoxy, gel, silicone, parylene, polyimide, and BCB. For atransparent organic or inorganic material, the refractive index can belarger than the air, and the light scattering from the effective activelayer can have a larger total reflective angle to reflect more lightback to the functional LED region and not scatter light to its adjacentzone. For a non-transparent organic or inorganic material, the lightfrom the effective active layer can also be absorbed and not scatteredto its adjacent zones.

The P-metal electrode layers 26 can be formed on the reflective metallayer 22 and a portion of an isolation layer to enhance each functionLED unit structure. As shown on the left-hand side of FIG. 1, the singlelight emitting diode (LED) structure 10, can include the n-type contactmetal layer 24. This contact metal layer can be formed in the same stepby depositing the metal layers through different technologies such asplasma enhanced vapor deposition, chemical vapor deposition, e-beamvaporization metal deposition, thermal deposition, sputter deposition,electroplating, electro-less chemical plating etcetera. In the singlelight emitting diode (LED) structure 10, multiple independentcontrollable emission areas are provided (effective emission area 1,effective emission area 2, effective emission area 3). In addition, eachemission area has a different surface area, with at least one area beingless than the others.

A P-connecting layer 58 can optionally be formed on the P-metalelectrode layers 26. Similarly, an n-connecting layer 60 can be formedon the N metal electrode layers 32.

FIGS. 2-19 illustrate different embodiments of the single light emittingdiode (LED) structure 10 (FIG. 1). These different embodimentsillustrate different or additional features, which can be incorporatedinto the single light emitting diode (LED) structure 10 (FIG. 1) tosatisfy a particular lighting application.

Referring to FIG. 2, a second type of single light emitting diode (LED)structure 10A is illustrated. The second single light emitting diode(LED) structure 10A is substantially the same as the single lightemitting diode (LED) 10 shown in FIG. 1. However, an optional reflectivemetal layer 22A can be formed on a portion of the exposed n-type layer14, and on the n-type contact metal layer 24. The reflective metal layer22A can also be formed on the sidewall of an isolation layer 62 to helpto reflect light from the active layer 16 and stop the light fromescaping to its adjacent zones.

Referring to FIG. 3, a third type of single light emitting diode (LED)structure 10B is illustrated. The third type of single light emittingdiode (LED) structure 10B is substantially the same as the single lightemitting diode (LED) 10 shown in FIG. 1 but includes an isolationmaterial 20B in the region between the N metal electrode layers 32(FIG. 1) and the P-metal electrode layers 26 (FIG. 1) and the regionstherebetween. In this embodiment, the isolation material 20B increasesthe single LED structure and fills in the empty spaces between the metalelectrodes as well as enhancing the optical output by reflecting straylights. With reference to FIG. 1, before forming the connecting layers58, 60, the isolation material 20B (FIG. 3) can be formed throughdifferent technologies such as patterning a photo resist, screenprinting, fill in, spray in and spin coating. The height of theisolation material 20B (FIG. 3) preferably is not at the same levelplane to the P-metal electrode layers 26 or the N metal electrode layers32. In applications, using an organic or inorganic material, the P-metalelectrode layer 26 and the N metal electrode layers 32 can be planarizedby any available planarization technique such as polishing, diamond sawhead planar scanning and CMP. In this case, the isolation material 20B,the P-metal electrode layers 26, and the N metal electrode layers 32would all be formed at a substantially same level plane. Alternately,the isolation material 20B can have photosensitive or non-photosensitiveproperties as well as dyeing by color chemical solutions. In addition,the isolation material 20B can be cured by thermal curing, UV curing, orIR curing. For example, organic or inorganic liquids can be selected toform as hard properties, such as gels, glues, sol-gels, epoxy, silicone,phenyl-silicone; photo-sensitive resister, UV cure able glues, andthermal cure able glues. Further, the isolation material 20B can beselected to form as stretch properties, such as gels, glues, epoxy,polyimide, silicone, methyl-silicone, cohesive gels, silicone gels,PMMA, photosensitive resister, UV or thermal cure able glues. Stillfurther, the isolation material 20B can be mixed with micron orsubmicron insulators, such as TiO₂, Al₂O₃, SiO₂, sol-gel, or anysuitable powder. An organic or inorganic liquid can also be mixed withnano-metals, such as Ni, Cu, Ag, Al and Au.

Referring to FIG. 4, a fourth type of single light emitting diode (LED)structure 10C is illustrated. Due to the various sizes of the emissionzones, the sizes of the various P electrodes 26 and N electrodes 32 arenot the same. It is desirable to have similar pad sizes to enhance theSMT of the LED structure 10C to a printed circuit board (PCB) or ceramiccircuit board (CCB). The fourth type of single light emitting diode(LED) structure 10C is substantially the same as the single lightemitting diode (LED) 10 shown in FIG. 1 but also includes a relocatedconnecting layer circuit 64 having insulators 66 to provide pads withsimilar sizes for ease of SMT, die attached or wire bonding. It is alsoimportant to make these pads with various shapes such that one coulddistinguish an N pad relative to a P pad. The insulators 66 can bepatterned and designed to form on the substantially same height levelplane and as the P-metal electrode layers 26 (FIG. 1) and the N metalelectrode layers 32 (FIG. 1). The relocated connecting layer circuit 64can also be connected to each P-metal electrode layer 26 (FIG. 1) or Nmetal electrode layer 32 (FIG. 1) to form another designed and patternedconnecting layer on a backside of the fourth single light emitting diode(LED) structure 10C. With the relocated connecting layer circuit 64having pads the single light emitting diode (LED) structure 10C can bemounted using SMT directly on a PCB or CCB.

Referring to FIG. 5, a fifth type of single light emitting diode (LED)structure 10D is illustrated. The fifth type of single light emittingdiode (LED) structure 10D is substantially the same as the single lightemitting diode (LED) 10C shown in FIG. 4 but includes additionalinsulation layers 68 further patterned on the fourth single lightemitting diode (LED) structure 10C of FIG. 4. In addition, N connectinglayers 70 and P connecting layers 72 can be relocated to the desiredarea to from additional connecting such as forming common pads formultiple emission zones to reduce the number of pads needed for SMT orfor die attaching or wire bonding to a PCB or CCB.

Referring to FIG. 6, a sixth type of single light emitting diode (LED)structure 10E is illustrated. The sixth type of single light emittingdiode (LED) structure 10E is substantially the same as the single lightemitting diode (LED) 10D shown in FIG. 5, but a portion or all of thesubstrate 12 (FIG. 1) has been removed using a suitable process such aslaser irradiated lifting off, chemical wet etching, mechanical liftingoff, grinding and chemical mechanical polishing (CMP). In addition,P-connecting layers 74 have been relocated by adding insulation layer76, 78, opening certain areas and forming additional metal layers.Forming processes for the insulation layers 76, 78, P-connecting layers74 and N-connecting layers 70 can be repeated to achieve the targetlocations for each connecting layer.

Referring to FIG. 7, a seventh type of single light emitting diode (LED)structure 10F having the wavelength conversion; member formed on the topof the substrate 12 is illustrated. The color converter members aresurrounded by a dam 82 to prevent stray light from one emission zone tothe other zones. The seventh type of single light emitting diode (LED)structure 10F is substantially the same as the single light emittingdiode (LED) 10 shown in FIG. 1, but also includes one or more wavelengthconversion member configured to change a wavelength of the light emittedfrom the active areas 16 (FIG. 1) to achieve a desired color spectra.The seventh type of single light emitting diode (LED) structure 10Fincludes two wavelength conversion members 80R in Zone 1 and 80G in Zone2, which are formed and insulated on the substrate 12 using anelectrically insulating dam 82. In addition, as shown in FIG. 7, the dam82 can be configured to align the wavelength conversion members 80R, 80Gwith an effective emission area 84 in each zone. (Alternately the dam 82can have a different placement than illustrated). The dam 82 can beformed as a black matrix formed on a surface of the substrate 12 and canbe configured to define each emission color in the different zones (Zone1, Zone 2, Zone 3). Further, if the seventh single light emitting diode(LED) structure 10F is constructed with a blue emission LED epitaxialstructure 34 (FIG. 1), the initial emitting color is already a blueemission color spectrum, such that a blue color converter is notrequired in Zone 2. However, for some applications a blue wavelengthconversion member (not shown) can be formed in Zone 2 to filter theoriginal blue light for a more consistent and accurate wavelength. Inother applications for obtaining a pure and consistent red, blue andgreen peak wavelength emission light, which considers the color balancefor a full color display application, a color filter can be formed ineach color zone to assure the same peak wavelength for each emissioncolor. The color filter can comprise a photo resist, or multipledielectric layers configured as a bandpass filter. For a shorterwavelength emission LED epitaxial structure 34 (FIG. 1) such as a violetor ultraviolet LED, a blue wavelength conversion member (not shown) canbe formed in Zone 2. Suitable materials for forming the wavelengthconversion members 80R, 80G (as well as the other described wave lengthconversion members) include phosphor, quantum dots (QDs) and other colorconversion material. The wavelength conversion members 80R, 80G can alsocomprise multiple layers such as a phosphor or quantum dot materials asa first layer and a color filter as the second layer.

Referring to FIG. 8, an eighth type of single light emitting diode (LED)structure 10G is illustrated. The eighth type of single light emittingdiode (LED) structure 10G is substantially the same as the single lightemitting diode (LED) 10F shown in FIG. 7. However, in the eighth type ofsingle light emitting diode (LED) structure 10G either a portion or allof the substrate 12 (FIG. 1). In other embodiments (not shown), thewavelength conversion members can comprise a transparent substrate suchas glass, quartz, sapphire, with a wavelength conversion layer thereon.Also, the dam 82 (FIG. 7) can be optionally formed to separate each oneof the wavelength conversion members allowing them to be aligned withthe zones (Zone 1, Zone 2, Zone 3) to convert the monochrome color ofthe single light emitting diode (LED) structure 10G to a desired colorfor each zone.

Referring to FIGS. 9A and 9B, a top view and a bottom view of theseventh type of single light emitting diode (LED) structure 10F (FIG. 7)is illustrated. As shown in FIG. 9A, the dam 82 can comprise a sealeddam mesh configured to allow the wavelength conversion members 80R, 80Gto be formed and aligned with Zones 1 and 3. The dam 82 can comprise anorganic or inorganic material such as epoxy, gel, silicone, polyimide,or any suitable material and could be mixed with micron or submicroninsulators, such as TiO₂, Al₂O₃, SiO₂, sol-gel, or any suitable powderto stop the light escaping to the adjacent zones. With a blue emissionLED epitaxial structure 34 (FIG. 1), a wavelength conversion memberconfigured as a green converter can be formed in Zone 3, and wavelengthconversion member configured as a red color converter can be formed inZone 1. As shown in FIG. 9B, an isolation material 86 can be conformallyformed on the backside. In addition, a n-connecting layer, ap-connecting layer-1, a p-connecting layer-2, and a p-connecting layer-3can be exposed and located. The connecting layers can comprise anelectrically conductive layer such as metal layers or multiple metallayers, such as Ni, Au, Ti, Al, TiW, TaN, Cr, Pd, Cu, In, Sn, Ag andalloys thereof. The alloyed metal can also comprise a eutectic layersuch as InAu, SnCu, SnAgCu and SnPb. The connecting layers can alsoinclude a bumping metal such as Sn, In, Cu, Ag, Au and alloys thereof.

Referring to FIGS. 10A and 10B, a top view and a bottom view of thesingle light emitting diode (LED) structure equivalent to but differentfrom the previously described top view of FIG. 9A and bottom view ofFIG. 9B are illustrated. As shown in FIG. 10A, in this single RGB lightemitting diode (LED) structure 10H, Zone 2 is offset with respect toZones 1 and 3. As shown in FIG. 10B, the n-connecting layer has apolygonal outline, and three P-connecting layers have a polygonaloutline defined by an insulating layer 88.

Referring to FIG. 11, a ninth type of single light emitting diode (LED)structure 10I is illustrated. The ninth type of single light emittingdiode (LED) structure 10I is substantially the same as the single lightemitting diode (LED) 10F shown in FIG. 7, but also includes an obliquelight shielding hole 90 in a backside of the substrate 12 configured toprovide a light stop structure for preventing the scattering lighteffect and the optical wave guiding effect in the substrate 12 toenhance optical output. In this embodiment, the oblique light shieldinghole 90 can be formed by laser cutting, dry etching, water jet guidinglaser cutting, dicing-saw cutting, as well as other suitable processes.For a laser cutting process for forming the oblique light shielding hole90, the laser can form one or more oblique holes in the substrate 12with a cutting-edge profile configured to prevent the light fromemitting to the adjacent zone. In the ninth type of single lightemitting diode (LED) structure 10I, an n-type contact metal 92 can beformed on the n-type layer 14 between Zones 1 and 2 and between Zones 2and 3. In addition, the n-type contact metal 92 can extend into, or notextend into, the oblique light shielding hole 90 and can either cover ornot cover the oblique light shielding hole 90. In the case of notcovering in the oblique light shielding hole 90, an isolation material94 can be formed into the oblique light shielding hole 90 by filling in.The isolation material 94 in the oblique light shielding hole 90provides a light stop structure to confine the emission light in eachzone (Zone 1, Zone 2, Zone 3). Also note that the oblique lightshielding hole 90 can be formed from the top of the substrate 12 ratherthan from the backside of the substrate (not shown).

Referring to FIG. 12, a tenth type of single light emitting diode (LED)structure 10J is illustrated. The tenth type of single light emittingdiode (LED) structure 10J is substantially the same as the single lightemitting diode (LED) 10I shown in FIG. 11, but includes additional topoblique light shielding holes 96 formed from the top or front side ofthe substrate 12 to further enhance optical output. In this case, a dam98 can be formed on a top major surface of the substrate 12 and on thetop oblique light shielding holes 96. Also note that the top obliquelight shielding holes 96 have a spacing away from the bottom obliquelight shielding holes 90. The purpose of the hole spacing is to preventthe substrate 12 from breaking apart by the holes 90, 96. In addition,the top oblique light shielding holes 96 can be formed and locatedoutside of the bottom oblique light shielding holes 90. This provides adouble light shielding oblique effect to confine the emitted light ineach zone and preventing the scattering of light to adjacent zones.

Referring to FIG. 13, an eleventh type of single light emitting diode(LED) structure 10K is illustrated. The eleventh type of single lightemitting diode (LED) structure 10K is substantially the same as thesingle light emitting diode (LED) 10J shown in FIG. 12. In the eleventhtype of single light emitting diode (LED) structure 10K, the top obliquelight shielding holes 96 are located inside the bottom oblique lightshielding holes 90 to enhance optical output.

Referring to FIG. 14, a twelfth type of single light emitting diode(LED) structure 10L is illustrated. The twelfth type of single lightemitting diode (LED) structure 10L is substantially the same as thesingle light emitting diode (LED) 10 shown in FIG. 1, but grooves 100are formed in the n-type layer 14 to further isolate each zone from anadjacent zone. In addition, an isolation layer 102 can be formed on aportion of the p-type layer 18, on the etched sidewalls of the grooves100, and on a portion of the n-type layer 14. A common reflective metallayer 104 can be formed on the p-type layer 18 to provide an electricalcontact and reflect the light back to each zone to enhance the opticaloutput. The common reflective metal layer 104 can also be configured asa common cathode and can also cover the exposed substrate 12 and aportion of the n-type layer 14. The common reflective metal layer 104can be formed as a finger shape, a mesh shape or any suitable shape toprovide an electrically conductive N metal electrode layer. A P-metalelectrode layer 106 can then be formed to the epitaxial structure 34 ineach zone and configured as an anode. A connecting layer 108 can also beformed on the P-metal electrode layer 106.

Referring to FIG. 15, a thirteenth type of single light emitting diode(LED) structure 10M is illustrated. The thirteenth type of single lightemitting diode (LED) structure 10M is substantially the same as thetwelfth single light emitting diode (LED) structure 10L but includes anisolation material 110 formed between the N metal electrode layers 32and the P-metal electrode layers 26 to enhance the single LEDFintegrity. The isolation material 110 can also be planarized togetherwith the P-metal electrode layers 26 and the N metal electrode layers 32to be a substantial at the same plane.

Referring to FIG. 16, a fourteenth type of single light emitting diode(LED) structure 10N is illustrated. The fourteenth type of single lightemitting diode (LED) structure 10N is substantially the same as thethirteenth single light emitting diode (LED) structure 10M but includeswave length conversion members 111 and a dam 112 constructed aspreviously described for the seventh single light emitting diode (LED)structure 10F shown in FIG. 7.

Referring to FIG. 17, a fifteenth type of single light emitting diode(LED) structure 10O is illustrated. The fifteenth type of single lightemitting diode (LED) structure 10O is substantially the same as thefourteenth single light emitting diode (LED) structure 10N but includesoblique light shielding holes 90 constructed as previously described forthe ninth single light emitting diode (LED) structure 10I shown in FIG.11 to enhance optical output.

Referring to FIG. 18, a sixteenth type of single light emitting diode(LED) structure 10P is illustrated. The sixteenth type of single lightemitting diode (LED) structure 10P is substantially the same as thefifteenth single light emitting diode (LED) structure 10O but includesoblique light shielding holes 96 constructed as previously described forthe tenth single light emitting diode (LED) structure 10J shown in FIG.12.

Referring to FIG. 19, a nineteenth type of single light emitting diode(LED) structure 10Q is illustrated. The nineteenth type of single lightemitting diode (LED) structure 10Q is substantially the same as thesixteenth single light emitting diode (LED) structure 10P but includesoblique light shielding holes 96 located inside the oblique lightshielding holes 90 as previously described for the eleventh type ofsingle light emitting diode (LED) structure 10K shown in FIG. 13 toenhance optical output.

While a number of exemplary aspects and embodiments have been discussedabove, those of skill in the art will recognize certain modifications,permutations, additions and subcombinations thereof. It is thereforeintended that the following appended claims and claims hereafterintroduced are interpreted to include all such modifications,permutations, additions and sub-combinations as are within their truespirit and scope.

I claim:
 1. A single light emitting diode (LED) structure comprising: anarray of spaced discrete light emitting zones separated by isolationareas, each emitting zone comprising an epitaxial structure comprisingan n-type layer, a p-type layer, and an active layer configured to emitan emitting light having a particular wavelength over an effectiveemission area, with the effective emission area for each emitting zonegeometrically defined and electrically configured to provide a desiredlight intensity, each emitting zone having a wavelength conversionmember on the effective emission area configured to convert an emittingwavelength to a desired color, an n-type metal layer in electricalcommunication with the n-type layer; and a p-type metal layer inelectrical communication with the p-type layer.
 2. The single lightemitting diode (LED) structure of claim 1 further comprising a substrateconfigured to support the array.
 3. The single light emitting diode(LED) structure of claim 1 wherein the effective emission area for eachzone is spaced from an adjacent effective emission area by a distance(d1) selected to reduce a cross talk effect between the light emittingzones.
 4. The single light emitting diode (LED) structure of claim 1further comprising a substrate configured to support the array and anoblique light shielding hole in the substrate configured to provide alight stop structure for preventing the scattering of the emittinglight.
 5. The single light emitting diode (LED) structure of claim 1wherein the isolation areas comprise an insulating material.
 6. Thesingle light emitting diode (LED) structure of claim 1 furthercomprising at least one color filter layer formed on at least oneemitting zone.
 7. The single light emitting diode (LED) structure ofclaim 1 further comprising at least one dam member formed above at leasta portion of at least one emitting zone.
 8. The single light emittingdiode (LED) structure of claim 1 wherein the effective emission area foreach zone is different.
 9. The single light emitting diode (LED)structure of claim 1 wherein the effective emission area for each zoneis equal.
 10. A single light emitting diode (LED) structure comprising:a substrate; a plurality of controllable, electrically separatedemitting zones on the substrate, with each emitting zone comprising anepitaxial structure comprising an n-type layer, a p-type layer, and anactive layer configured to emit an emitting light having a particularwavelength over an effective emission area, with the effective emissionarea for each emitting zone geometrically defined to provide a desiredlight intensity, each emitting zone having a wavelength conversionmember on the effective emission area configured to convert an emittingwavelength of the emitting light to a different color, and with theeffective emission area for each zone spaced from an adjacent effectiveemission area by a distance (d1) selected to reduce a cross talk effectbetween the light emitting from adjacent zones; and a reflective metallayer on the substrate configured as a common cathode for each epitaxialstructure.
 11. The single light emitting diode (LED) structure of claim10 further comprising one or more color filter layers in selectedemission zones.
 12. The single light emitting diode (LED) structure ofclaim 10 wherein the emitting zones are electrically separated by aninsulation material.
 13. The single light emitting diode (LED) structureof claim 10 further comprising a plurality of oblique light shieldingholes in the substrate configured to provide light stop structures. 14.The single light emitting diode (LED) structure of claim 13 wherein theoblique light shielding holes comprise spaced holes in a back side ofthe substrate.
 15. The single light emitting diode (LED) structure ofclaim 13 wherein the oblique light shielding holes comprise spaced holesin a front side of the substrate.
 16. A single light emitting diode(LED) structure comprising: a substrate; a plurality of controllable,electrically separated light emitting zones on the substrate havingmultiple emission zones, with an effective emission area for eachemission zone spaced from an adjacent effective emission area by adistance (d1) selected to reduce a cross talk effect between the lightemitting zones; and a reflective metal layer on the substrate configuredas a common cathode in electrical communication with the light emittingzones.
 17. The single light emitting diode (LED) structure of claim 16wherein the emitting zones are electrically separated by an insulationmaterial.
 18. The single light emitting diode (LED) structure of claim16 further comprising a plurality of oblique light shielding holes inthe substrate configured to provide light stop structures.